SiGe foda, kuma aka sani dasiliki germanium foda, wani abu ne wanda ya sami kulawa sosai a fannin fasaha na semiconductor.Wannan labarin yana nufin nuna dalilin da ya saSiGeana amfani da shi sosai a aikace-aikace iri-iri kuma yana bincika kaddarorin sa da fa'idodi na musamman.
Silicon germanium fodawani abu ne da ya ƙunshi siliki da atom ɗin germanium.Haɗin waɗannan abubuwa guda biyu yana haifar da wani abu tare da kyawawan kaddarorin da ba a samo su a cikin siliki mai tsabta ko germanium ba.Daya daga cikin manyan dalilan amfaniSiGeshine kyakkyawan dacewarsa tare da fasahar tushen silicon.
Haɗin kaiSiGecikin na'urorin tushen silicon yana ba da fa'idodi da yawa.Ɗaya daga cikin manyan fa'idodin shine ikonsa na canza kayan lantarki na silicon, don haka inganta aikin kayan aikin lantarki.Idan aka kwatanta da silicon,SiGeyana da mafi girman motsin lantarki da rami, yana ba da izinin jigilar lantarki da sauri da haɓaka saurin na'ura.Wannan kadarar tana da fa'ida musamman don aikace-aikacen mitoci masu girma, kamar tsarin sadarwar mara waya da haɗaɗɗun da'irori masu sauri.
Bugu da kari,SiGeyana da ƙananan rata na bandeji fiye da silicon, wanda ke ba shi damar ɗaukar haske da fitar da haske da inganci.Wannan kadarar ta sanya ta zama abu mai mahimmanci don na'urorin optoelectronic kamar masu gano hoto da diodes masu haske (LEDs).SiGeHar ila yau yana da kyakkyawan yanayin zafi, yana ba shi damar watsar da zafi yadda ya kamata, yana sa ya dace da na'urorin da ke buƙatar ingantaccen kulawar thermal.
Wani dalili naSiGeYaɗuwar amfani shine dacewarsa tare da matakan masana'anta na silicon.SiGe fodaana iya haɗe shi da siliki cikin sauƙi sannan a ajiye shi akan siliki ta hanyar amfani da daidaitattun dabarun masana'anta na semiconductor kamar surar tururi (CVD) ko molecular beam epitaxy (MBE).Wannan haɗin kai maras kyau ya sa ya zama mai tsada kuma yana tabbatar da sauye-sauye mai sauƙi ga masana'antun da suka riga sun kafa wuraren masana'anta na silicon.
SiGe fodaHakanan zai iya ƙirƙirar siliki mai tsauri.An halicci iri a cikin siliki ta hanyar ajiye wani bakin ciki Layer naSiGea saman siliki substrate sa'an nan selectively cire germanium atom.Wannan nau'in yana canza tsarin band ɗin silicon, yana ƙara haɓaka kayan lantarki.Silikon da aka ƙera ya zama maɓalli mai mahimmanci a cikin manyan ayyuka na transistor, yana ba da damar saurin sauyawa cikin sauri da ƙarancin amfani da wutar lantarki.
Bugu da kari,SiGe fodayana da fa'idar amfani da yawa a fagen na'urorin thermoelectric.Thermoelectric na'urorin suna canza zafi zuwa wutar lantarki kuma akasin haka, yana mai da su mahimmanci a aikace-aikace kamar samar da wutar lantarki da tsarin sanyaya.SiGeyana da high thermal conductivity da tunable lantarki Properties, samar da manufa abu ga ci gaban da m thermoelectric na'urorin.
A karshe,SiGe foda or siliki germanium fodayana da fa'idodi daban-daban da aikace-aikace a fagen fasahar semiconductor.Daidaitawar sa tare da matakan silicon data kasance, ingantattun kaddarorin lantarki da haɓakar zafin jiki sun sa ya zama sanannen abu.Ko haɓaka aikin haɗaɗɗun da'irori, haɓaka na'urorin optoelectronic, ko ƙirƙirar ingantattun na'urorin thermoelectric,SiGeya ci gaba da tabbatar da ƙimarsa azaman kayan aiki da yawa.Yayin da bincike da fasaha ke ci gaba da ci gaba, muna sa ranSiGe powdersdon taka muhimmiyar rawa wajen tsara makomar na'urorin semiconductor.
Lokacin aikawa: Nuwamba-03-2023